| PART |
Description |
Maker |
| K81A1 |
NOISE DIODE FOR USE AS A STANDARD NOISE SOURCE FOR METRIC WAVES
|
NXP Semiconductors
|
| BFG67/XT/R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 50MA I(C) | SOT-143 晶体管|晶体管|叩| 10V的五（巴西）总裁| 50mA的一（c）|的SOT - 143
|
NXP Semiconductors N.V.
|
| CNS7108 |
COAXIAL AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| NMA-2001 NMA-2002 NMA-2003 NMA-2004 NMA-2005 NMA-2 |
NMA 2000 NOISE SOURCE SERIES
|
Micronetics, Inc.
|
| SMN7108 SMN7108-D1C |
1/2 INCH SURFACE MOUNT AMPLIFIED NOISE SOURCE
|
Micronetics, Inc.
|
| ADR441 ADR444 |
Ultralow Noise, LDO XFET? 2.5V Voltage Reference w/Current Sink and Source
Ultralow Noise, LDO XFET? 4.096V Voltage Reference w/Current Sink and Source
|
Analog Devices
|
| SMN3110-A2A |
LOW BIAS VOLTAGE SURFACE MOUNT NOISE SOURCE
|
Micronetics, Inc.
|
| ADR361BUJZ-R2 ADR363BUJZ-R2 ADR365WAUJZ-R7 ADR360- |
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 2.5 VOUT; Package: TSOT; No of Pins: 5; Temperature Range: Industrial 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PDSO5
Low Power, Low Noise Voltage Reference with Sink/Source Capability, 3.0 VOUT; Package: TSOT; No of Pins: 5; Temperature Range: Industrial 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 3 V, PDSO5
Low Power, Low Noise Voltage References with Sink/Source Capability
|
Analog Devices, Inc.
|
| V54C316162V-6 V54C316162V-55 V54C316162V-7 |
200/183/166/143 MHz 3.3 VOLT, 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAMX 512Kbit × 16
MORAY EEL 200/183/166/143 MHz.3伏，刷新4K的超高性能100万16 SDRAM组X 512Kbit × 16
200/183/166/143 MHz 3.3 VOLT/ 4K REFRESH ULTRA HIGH PERFORMANCE 1M X 16 SDRAM 2 BANKS X 512Kbit X 16
|
Mosel Vitelic, Corp.
Macronix International Co., Ltd.
Mosel Vitelic Corp
|
| D1022UK D1022 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应100W-28V-500MHz,推挽)
METAL GATE RF SILICON FET
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| D1208UK D1208 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-12.5V-500MHz,Push-Pull)(镀金多用DMOS射频硅场效应40W-12.5V-500MHz,推挽)
|
Seme LAB
TT electronics Semelab Limited
|
